Extraction Of The Bulk-Charge Effect Parameter In Mosfets
A method is presented to extract the bulk charge effect parameter in MOSFET. The method requires measuring the drain current as a function of gate voltage at two small values of the drain voltage. The procedure was tested with Id-Vgs characteristics modeled with SPICE and with a a 2-D device simulator. It was also applied to experimental Id-Vgs characteristics. © 1999 IEEE.
2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
Number of Pages
Article; Proceedings Paper
Source API URL
Sánchez, F. J.García; Ortiz-Conde, A.; and Salcedo, J. A., "Extraction Of The Bulk-Charge Effect Parameter In Mosfets" (2000). Scopus Export 2000s. 948.