Title
Extraction Of The Bulk-Charge Effect Parameter In Mosfets
Abstract
A method is presented to extract the bulk charge effect parameter in MOSFET. The method requires measuring the drain current as a function of gate voltage at two small values of the drain voltage. The procedure was tested with Id-Vgs characteristics modeled with SPICE and with a a 2-D device simulator. It was also applied to experimental Id-Vgs characteristics. © 1999 IEEE.
Publication Date
1-1-2000
Publication Title
2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
Volume
1
Number of Pages
133-136
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/ICMEL.2000.840539
Copyright Status
Unknown
Socpus ID
84906834914 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84906834914
STARS Citation
Sánchez, F. J.García; Ortiz-Conde, A.; and Salcedo, J. A., "Extraction Of The Bulk-Charge Effect Parameter In Mosfets" (2000). Scopus Export 2000s. 948.
https://stars.library.ucf.edu/scopus2000/948