Overview Of Sige Technology Modeling And Application (Invited Paper)
Advances in wireless communications and information processing systems require implementation of very high performance electronic systems. In recent years, SiGe heterojunction bipolar transistors (HBTs) have merged us one of the leading contenders to satisfy these demands. The low emitter-base turn-on voltage and device scaling significantly reduce power consumption in circuit operation, while maintaining high speed. With the increasing demand placed on voice and data communications, transmitting, receiving, and processing information at high frequencies and high speeds, the use of SiGe bipolar transistors becomes increasingly important.
Proceedings - International Symposium on Quality Electronic Design, ISQED
Number of Pages
Article; Proceedings Paper
Source API URL
Yuan, Jiann S., "Overview Of Sige Technology Modeling And Application (Invited Paper)" (2000). Scopus Export 2000s. 960.