Large Bandwidth Silicon Nitride Spot-Size Converter For Efficient Supercontinuum Coupling To Chalcogenide Waveguide

Creator

Jean Etienne Tremblay, Department of Electrical Engineering and Computer Sciences
Yung Hsiang Lin, Department of Electrical Engineering and Computer Sciences
Po Kai Hsu, Department of Electrical Engineering and Computer Sciences
Marcin Malinowski, University of Central Florida
Spencer Novak, University of Central Florida

Abstract

Silicon nitride spot-size converters were fabricated in a damascene process to improve the performance of supercontinuum generation in arsenic-free chalcogenide waveguides. Supercontinuum generation covering 950-1750 nm with 200 pJ pulses is demonstrated.

Publication Date

10-25-2017

Publication Title

2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings

Volume

2017-January

Number of Pages

1-2

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Copyright Status

Unknown

Socpus ID

85044234285 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85044234285

STARS Citation

Tremblay, Jean Etienne; Lin, Yung Hsiang; Hsu, Po Kai; Malinowski, Marcin; and Novak, Spencer, "Large Bandwidth Silicon Nitride Spot-Size Converter For Efficient Supercontinuum Coupling To Chalcogenide Waveguide" (2017). Scopus Export 2015-2019. 6560.
https://stars.library.ucf.edu/scopus2015/6560