Low And Moderate Dose Gamma-Irradiation And Annealing Impact On Electronic And Electrical Properties Of Algan/Gan High Electron Mobility Transistors

Keywords

Activation energy; Diffusion length; Gamma irradiation; High electron mobility transistors; Wide-band-gap semiconductors

Abstract

To understand the effects of 60Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with electron beam-induced current measurements, was able to provide critical information on defects induced in the material as a result of gamma-irradiation. It was shown that at low gamma-irradiation doses, the minority carrier diffusion length in AlGaN/GaN exhibits an increase up to ∼300Gy. The observed effect is due to longer minority carrier (hole) life time in the material's valence band as a result of an internal electron irradiation by Compton electrons. However, for larger doses of gamma irradiation (above 400Gy), deteriorations in transport properties and device characteristics were observed. This is consistent with the higher density of deep traps in the material's forbidden gap induced by a larger dose of gamma-irradiation. Moderate annealing of device structures at 200°C for 25min resulted in partial recovery of transport properties and device performance.

Publication Date

5-4-2015

Publication Title

Radiation Effects and Defects in Solids

Volume

170

Issue

5

Number of Pages

377-385

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1080/10420150.2015.1010170

Socpus ID

84940714068 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84940714068

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