Optical and electron beam studies of carrier transport in quasibulk GaN
Abbreviated Journal Title
Appl. Phys. Lett.
RECOMBINATION; EPITAXY; DEVICES; Physics, Applied
Variable temperature light-induced transient grating technique combined with electron beam-induced current measurements in situ in a scanning electron microscope were employed for carrier transport studies in quasibulk hydride-vapor phase epitaxy grown undoped GaN layers. Diffusion length of carriers independently determined from both techniques was found to increase with temperature in the range from 70 to 400 K. This increase was attributed to the temperature-induced growth of carrier lifetime, as was confirmed by light-induced transient grating measurements below 300 K and by cathodoluminescence above room temperature. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3220062]
Applied Physics Letters
"Optical and electron beam studies of carrier transport in quasibulk GaN" (2009). Faculty Bibliography 2000s. 1804.