Title

Optical and electron beam studies of carrier transport in quasibulk GaN

Authors

Authors

Y. Lin; E. Flitsyian; L. Chernyak; T. Malinauskas; R. Aleksiejunas; K. Jarasiunas; W. Lim; S. J. Pearton;K. Gartsman

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

RECOMBINATION; EPITAXY; DEVICES; Physics, Applied

Abstract

Variable temperature light-induced transient grating technique combined with electron beam-induced current measurements in situ in a scanning electron microscope were employed for carrier transport studies in quasibulk hydride-vapor phase epitaxy grown undoped GaN layers. Diffusion length of carriers independently determined from both techniques was found to increase with temperature in the range from 70 to 400 K. This increase was attributed to the temperature-induced growth of carrier lifetime, as was confirmed by light-induced transient grating measurements below 300 K and by cathodoluminescence above room temperature. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3220062]

Journal Title

Applied Physics Letters

Volume

95

Issue/Number

9

Publication Date

1-1-2009

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000269625800028

ISSN

0003-6951

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