Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry
Abbreviated Journal Title
J. Appl. Phys.
CADMIUM TELLURIDE; NONSTOICHIOMETRY; PHASE; GROWTH; Physics, Applied
Careful analysis of the Cd-Te pressure-temperature-composition phase diagram, shows a deviation of CdTe stoichiometry only in the Te-depletion direction between 450 and 550 degrees C. Combined control over the semiconductor composition, via intrinsic defects, and over the atmosphere and cooling rate can, therefore, yield a process for intrinsic doping of CdTe at these relatively low temperatures. We present results that support this. Quenching of CdTe, following its annealing in Te atmosphere at 400-550 degrees C, leads to p-type conductivity with a hole concentration of similar to 2 x 10(16) cm(-3). Slow cooling of the samples, after 550 degrees C annealing in Te or in vacuum, increases the hole concentration by one order of magnitude, as compared to quenching at the same temperature. We explain this increase by the defect reaction between Te vacancies and Te interstitials. Annealing in Cd at 400-550 degrees C leads to n-type conductivity with an electron concentration of similar to 2 x 10(16) cm(-3). Annealing at 450-550 degrees C in the equilibrium atmosphere, provided by adding CdTe powder, gives n-type material. (C) 2000 American Institute of Physics. [S0021-8979(00)05120-3].
Journal of Applied Physics
"Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry" (2000). Faculty Bibliography 2000s. 2682.