Title

Cathodoluminescence studies of the electron injection-induced effects in GaN

Authors

Authors

L. Chernyak; W. Burdett; M. Klimov;A. Osinsky

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

MINORITY-CARRIER TRANSPORT; P-TYPE GAN; ALGAN/GAN SUPERLATTICES; BEAM; PHOTODETECTORS; STATES; Physics, Applied

Abstract

Local irradiation of p-type GaN with the electron beam of a scanning electron microscope resulted in up to a threefold decrease of the peak cathodoluminescence intensity at similar to379 nm, as was observed in the variable temperature measurements. The cathodoluminescence results are consistent with an increase of the minority carrier diffusion length in the material, as is evident from the electron-beam-induced current measurements. The activation energy for the electron injection effect, estimated from the temperature-dependent cathodoluminescence, is in agreement with the thermal ionization energy of the Mg-acceptor in GaN. (C) 2003 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

847

Issue/Number

21

Publication Date

1-1-2003

Document Type

Article

Language

English

First Page

3680

Last Page

3682

WOS Identifier

WOS:000183317100039

ISSN

0003-6951

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