Title

High conversion efficiency mass-limited Sn-based laser plasma source for extreme ultraviolet lithography

Authors

Authors

M. Richardson; C. S. Koay; K. Takenoshita; C. Keyser;M. Al-Rabban

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Vac. Sci. Technol. B

Keywords

EUV SOURCE; X-RAY; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

Extreme ultraviolet lithography requires a high-efficiency light source at 13 nm that is free from debris. Our mass-limited Sn-based laser plasma source shows 1.2% conversion efficiency. Emission spectra from the source were obtained to observe the effects of Sri concentration and effects of laser intensity. Debris measurements were analyzed, and an enhanced repeller field configuration shows marked improvement in mitigating debris. (C) 2004 American Vacuum Society.

Journal Title

Journal of Vacuum Science & Technology B

Volume

22

Issue/Number

2

Publication Date

1-1-2004

Document Type

Article; Proceedings Paper

Language

English

First Page

785

Last Page

790

WOS Identifier

WOS:000221092300059

ISSN

1071-1023

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