Authors

H. Francois-St-Cyr; E. Anoshkina; F. Stevie; L. Chow; K. Richardson;D. Zhou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Vac. Sci. Technol. B

Keywords

Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

A systematic investigation of the diffusion of Be, B, Na, Mg, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Ni, Zn, Ge, Rb, and Mo in silicon has been carried out. The elements were implanted into silicon wafers as low dose impurities, and then postheat treatments of the ion-implanted samples were conducted at different temperatures for a specific time. Following the anneals, the depth profiles were obtained by secondary ion mass spectrometry analyses. A wide range of diffusion behavior has been observed for these elements. Based on differences in the depth profiles the diffusion mechanism was identified where possible. (C) 2001 American Vacuum Society.

Journal Title

Journal of Vacuum Science & Technology B

Volume

19

Issue/Number

5

Publication Date

1-1-2001

Document Type

Article; Proceedings Paper

Language

English

First Page

1769

Last Page

1774

WOS Identifier

WOS:000171804700016

ISSN

1071-1023

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