Effects of Layer Stacking on the Combination Raman Modes in Graphene
Abbreviated Journal Title
graphene; Raman; spectroscopy; double resonance; combination; WALLED CARBON NANOTUBES; SCATTERING; GRAPHITE; CRYSTALS; PHONONS; SPECTRA; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience &; Nanotechnology; Materials Science, Multidisciplinary
We have observer new combination modes in the range from 1650 to 2300 cm(-1) in single-(SLG), bi-, few-layer and Incommensurate bilayer graphene (IBLG) on silicon dioxide substrates. A peak at similar to 1860 cm(-1) (ITALO(-)) is observed due to a combination of the in-plane transverse acoustic (iTA) and the longitudinal optical (LO) phonons. The intensity of this peak decreases with increasing number, of layers and this peak is absent for bulk graphite. The overtone of the out-of-plane transverse optical (oTO), phonon at similar to 1750 cm(-1), also called the M band, is suppressed for both SLG and IBLG. In addition, two previously unidentified modes at similar to 2200 and similar to 1880 cm(-1) are observed in SLG. The 2220 cm(-1) (1880 cm(-1)) mode is tentatively assigned to the combination mode of In plane transverse optical (iTO) and TA phonons (oTO+LO phonons) around the K point in the graphene Brillouin zone. Finally, the peak frequency of the 1880 (2220) cm(-1) mode is observed to increase (decrease) linearly with increasing graphene layers.
"Effects of Layer Stacking on the Combination Raman Modes in Graphene" (2011). Faculty Bibliography 2010s. 1799.