Surface depletion mediated control of inter-sub-band absorption in GaAs/AlAs semiconductor quantum well systems
Abbreviated Journal Title
Appl. Phys. Lett.
aluminium compounds; conduction bands; electron gas; etching; Fourier; transform spectra; gallium arsenide; III-V semiconductors; semiconductor; quantum wells; transmission electron microscopy; Physics, Applied
The modification of quantum well inter-sub-band absorption properties due to surface depletion induced band bending is reported. Fourier transform infrared spectroscopy measurements of a GaAs/AlAs multiple quantum well system reveal a reduction in the characteristic absorption resonance in correlation with wet chemical etching. High resolution transmission electron microscopy confirms the presence of the quantum wells after etching, suggesting the quantum wells are positioned within the surface depletion region of the structure. This method of inter-sub-band absorption modification could be used for the formation of quantum dots from a quantum well system with the precise, deterministic control of their location.(C) 2012 American Institute of Physics. [doi: 10.1063/1.3680232]
Applied Physics Letters
"Surface depletion mediated control of inter-sub-band absorption in GaAs/AlAs semiconductor quantum well systems" (2012). Faculty Bibliography 2010s. 2338.