Title

Deep-ultraviolet photodetectors from epitaxially grown NixMg1-xO

Authors

Authors

J. W. Mares; R. C. Boutwell; M. Wei; A. Scheurer;W. V. Schoenfeld

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

OXIDE THIN-FILMS; NICMG1-CO SOLID-SOLUTIONS; NICKEL-OXIDE; OPTICAL-PROPERTIES; BAND-GAP; MGXZN1-XO; PHOTOCONDUCTIVITY; ABSORPTION; ALLOY; NIO; Physics, Applied

Abstract

Deep-ultraviolet (DUV) photodetectors were fabricated from high quality NixMg1-xO epitaxially grown by plasma-assisted molecular beam epitaxy on an approximately lattice matched MgO < 100 > substrate. A mid-range Ni composition (x=0.54) NixMg1-xO film was grown for DUV (lambda(peak) <300 nm) photoresponse and the film was characterized by reflected high-energy electron diffraction, Rutherford backscattering spectroscopy, x-ray diffraction, and optical transmission measurements. Photoconductive detectors were then fabricated by deposition of symmetric interdigitated contacts (10 nm Pt/150 nm Au) with contact separations of 5, 10, and 15 mu m. The detectors exhibited peak responsivities in the DUV (lambda(peak) approximate to 250 nm) as high as 12 mA/W, low dark currents (I-dark <25 nA), and DUV:visible ejection ratio of approximately 800:1. (C) 2010 American Institute of Physics. [doi:10.1063/1.3503634]

Journal Title

Applied Physics Letters

Volume

97

Issue/Number

16

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000283502100013

ISSN

0003-6951

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