Title

Effect of low dose gamma-irradiation on DC performance of circular nnlGaN/GaN high electron mobility transistors

Authors

Authors

Y. H. Hwang; Y. L. Hsieh; L. Lei; S. Li; F. Ren; S. J. Pearton; A. Yadav; C. Schwarz; M. Shatkhin; L. Wang; E. Flitsiyan; L. Chernyak; A. G. Baca; A. A. Allerman; C. A. Sanchez;Kravchenko, II

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Vac. Sci. Technol. B

Keywords

ALGAN/GAN HEMTS; GAN; DEVICES; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

The changes in direct current performance of circular-shaped AlGaN/GaN high electron mobility transistors (HEMTs) after Co-60 gamma-irradiation doses of 50, 300, 450, or 700 Gy were measured. The main effects on the HEMTs after irradiation were increases of both drain current and electron mobility. Compton electrons induced from the absorption of the gamma-rays appear to generate donor type defects. Drain current dispersions of similar to 5% were observed during gate lag measurements due to the formation of a virtual gate between the gate and drain resulting from the defects generated during gamma-irradiation. (C) 2014 American Vacuum Society.

Journal Title

Journal of Vacuum Science & Technology B

Volume

32

Issue/Number

3

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

5

WOS Identifier

WOS:000337061900034

ISSN

1071-1023

Share

COinS