Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
aluminium compounds; gallium compounds; high electron mobility; transistors; III-V semiconductors; plasmonics; terahertz waves; wide; band gap semiconductors; FIELD-EFFECT TRANSISTOR; INVERSION-LAYERS; DETECTORS; MODES; Physics, Applied
Abstract
Strong plasmon resonances have been observed in the terahertz transmission spectra (1-5 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor (HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating, which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications.
Journal Title
Applied Physics Letters
Volume
96
Issue/Number
4
Publication Date
1-1-2010
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Muravjov, A. V.; Veksler, D. B.; Popov, V. V.; Polischuk, O. V.; Pala, N.; Hu, X.; Gaska, R.; Saxena, H.; Peale, R. E.; and Shur, M. S., "Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures" (2010). Faculty Bibliography 2010s. 570.
https://stars.library.ucf.edu/facultybib2010/570
Comments
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