Title

High quality solution processed carbon nanotube transistors assembled by dielectrophoresis

Authors

Authors

P. Stokes;S. I. Khondaker

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

carbon nanotubes; electrophoresis; field effect transistors; nanoelectronics; nanotube devices; TRANSPORT; Physics, Applied

Abstract

We report on high quality individual solution processed single-walled carbon nanotube (SWNT) field effect transistors assembled from a commercial surfactant free solution via dielectrophoresis. The devices show field effect mobilities up to 1380 cm(2)/V s and on-state conductance up to 6 mu S. The mobility values are an order of magnitude improvement over previous solution processed SWNT devices and close to the theoretical limit. These results demonstrate that high quality SWNT devices can be obtained from solution processing and will have significant impact in high yield fabrication of SWNT nanoelectronic devices.

Journal Title

Applied Physics Letters

Volume

96

Issue/Number

8

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000275027200076

ISSN

0003-6951

Share

COinS