Inp Based Solar Cells For Space Applicatioion: Reduction Of External Losses
Dhere, Neelkanth; Gessert, T; Dhere, Neelkanth; Wu, X
Although InP-based solar cells have considerable potential for space applications, it is necessary to improve efficiencies to around the level of GaAs or Si cells before their excellent radiation resistance can be regarded as a dominant advantage. The authors concentrate on indium-tin-oxide/InP cells, presenting data relating to reduction of the contact resistance of the rear surface metallization, reduction of reflectance losses by choosing indium-tin-oxide deposition conditions to give specific optical properties, and reduction of losses associated with the grid. Simultaneous optimization of all of these has led to improved values of Jsc. For devices of approximately 1 cm2 in area, the largest Jsc achieved to date is 28.1 mA/aq cm (AM1.5, SERI/NASA direct normal spectrum, 25 C, total area, 100 mW/sq cm). For this particular cell, the equivalent AM0 value of Jsc was 34.6 mA/sq cm, which appears to be the largest reported for any InP-based cell.
Florida Solar Energy Center and Coutts, T, "Inp Based Solar Cells For Space Applicatioion: Reduction Of External Losses" (1987). FSEC Energy Research Center®. 1004.