Gallium Content Enhancement In CIGS Thin Films Prepared By Two-Selenization Process Using Se Vapor
Gallium content in CulnGaSe thin Films prepared by two-selenizations process using Se vapor has been enhanced by optimizing the metallic layer sequence and selenization parameters. Maintaining a high selenium vapor incidence rate of x50 A increased the Ga content x in the formula CulnGaSe from 0.06 to 0.11. Fast temperature rise of 50-90° C min., and controlled cooling-down rate to 3004 C with a lower Se vapor incidence rate increased the Ga content still further. CulnGaSe -thin- film solar cell having Ga content x of 0.10 showed an open-circuit voltage V, of 451 .E mV, a short-circuit current density J of 34.5 mA, a fill factor of 57.87%, and a total-area efficiency of 9.02% with a fairly constant spectral response. The results are significant because the process can be easily scaled up for economic manufacture.
Florida Solar Energy Center and Dhere, Neelkanth, "Gallium Content Enhancement In CIGS Thin Films Prepared By Two-Selenization Process Using Se Vapor" (1996). FSEC Energy Research Center®. 792.