Morphology Of Precursors And Cuingase2 Thin Films Prepared B691 By A Two-Stage Selenization Process

Secondary Author(s)

Kuttath, Shankar; Moutinho, Helio


The morphology of sequentially sputtered metallic precursors and CuInGaSe2 thin films prepared using a novel two-stage selenization process was found to change from initially very smooth layers with a root-mean-square (rms) surface roughness of < 10' to coalescing grains with a fine (~200' ) subgrain structure, three-dimensional ~ 9000' size islands, and finally to compact, well-faceted, large ~ 1' m grain-size CuInGaSe2 thin films with a rms roughness of 950' 1500'. In situ homogenization of Cu-rich precursors prior to the first selenization and a maximum selenization temperature of 550' 560' C that provided beneficial fluxing action of copper selenide improved the morphology of completed CuInGaSe2 thin films and the photovoltaic conversion efficiency of the solar cells.

Date Published



FSEC Energy Research Center® Collection

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