Title

Investigation Of High-Current Effects On The Current Gain Of Alxga1-Xas/Gaas/Gaas Abrupt Heterojunction Bipolar-Transistors

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering; Electrical & Electronic; Physics; Applied; Physics; Condensed Matter

Abstract

High-collector-current effects, such as base pushout and base-collector space-charge-region thickness modulation, on the common-emitter d.c. current gain of Al xGa 1-xAs/GaAs/GaAs abrupt heterojunction bipolar transistors is examined by including these effects in a recently developed thermionic-diffusion-field model. Current-gain falloff is predicted by the present model for transistors operating at high current densities (or at saturation mode), and comparison of the present model and measured data for an Al 0.25Ga 0.75As/GaAs/GaAs heterojunction bipolar transistor for digital and A/D applications is included.

Journal Title

Solid-State Electronics

Volume

32

Issue/Number

2

Publication Date

1-1-1989

Document Type

Article

Language

English

First Page

169

Last Page

174

WOS Identifier

WOS:A1989T446900012

ISSN

0038-1101

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