Title

Effects Of Band-Gap Narrowing On Common-Emitter Current Gain Of Gaas Homojunction Bipolar-Transistors

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

Physics; Applied

Abstract

GaAs homojunction bipolar transistors (GaAs BTs) are attractive because of their manufacturability and high electron mobility. This paper theoretically investigates the band‐gap narrowing effects on the common‐emitter current gain β of GaAs BTs based on recently reported band‐gap‐narrowing results for GaAs taking into account interactions between free carriers and dopant ions. It is shown that, benefitting from the band‐gap contractions, an n+/ p+ /n GaAs BT can possess good β as well as high cutoff frequency, contrasting with the conventional concept that n+ /p/n doping in a GaAs BT is needed in order to obtain high β. Experimental results reported in literature regarding n+ /p+ /n GaAs BTs are also discussed.

Journal Title

Journal of Applied Physics

Volume

65

Issue/Number

12

Publication Date

1-1-1989

Document Type

Article

Language

English

First Page

5181

Last Page

5184

WOS Identifier

WOS:A1989U792600111

ISSN

0021-8979

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