Calculating Double-Exponential Diode Model Parameters From Previously Extracted Single-Exponential Model Parameters
Abbreviated Journal Title
DIODES; SEMICONDUCTOR DEVICE MODELS; HIGH SERIES RESISTANCE; SCHOTTKY DIODES; IDEALITY FACTOR; IV PLOT; Engineering, Electrical & Electronic
A procedure is proposed to calculate both pre-exponential reverse currents of the double-exponential model of a diode's current-voltage experimental characteristics from previously extracted reverse current and diode quality factor of the diode's single-exponential model. The procedure is illustrated by modelling the drain-body junction of a MOSFET including its parasitic series resistance.
"Calculating Double-Exponential Diode Model Parameters From Previously Extracted Single-Exponential Model Parameters" (1995). Faculty Bibliography 1990s. 1455.