Calculating Double-Exponential Diode Model Parameters From Previously Extracted Single-Exponential Model Parameters

    Authors

    F. J. G. Sanchez; A. Ortizconde;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Electron. Lett.

    Keywords

    DIODES; SEMICONDUCTOR DEVICE MODELS; HIGH SERIES RESISTANCE; SCHOTTKY DIODES; IDEALITY FACTOR; IV PLOT; Engineering, Electrical & Electronic

    Abstract

    A procedure is proposed to calculate both pre-exponential reverse currents of the double-exponential model of a diode's current-voltage experimental characteristics from previously extracted reverse current and diode quality factor of the diode's single-exponential model. The procedure is illustrated by modelling the drain-body junction of a MOSFET including its parasitic series resistance.

    Journal Title

    Electronics Letters

    Volume

    31

    Issue/Number

    1

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    71

    Last Page

    72

    WOS Identifier

    WOS:A1995QE97600050

    ISSN

    0013-5194

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