Title
Calculating Double-Exponential Diode Model Parameters From Previously Extracted Single-Exponential Model Parameters
Abbreviated Journal Title
Electron. Lett.
Keywords
DIODES; SEMICONDUCTOR DEVICE MODELS; HIGH SERIES RESISTANCE; SCHOTTKY DIODES; IDEALITY FACTOR; IV PLOT; Engineering, Electrical & Electronic
Abstract
A procedure is proposed to calculate both pre-exponential reverse currents of the double-exponential model of a diode's current-voltage experimental characteristics from previously extracted reverse current and diode quality factor of the diode's single-exponential model. The procedure is illustrated by modelling the drain-body junction of a MOSFET including its parasitic series resistance.
Journal Title
Electronics Letters
Volume
31
Issue/Number
1
Publication Date
1-1-1995
Document Type
Article
Language
English
First Page
71
Last Page
72
WOS Identifier
ISSN
0013-5194
Recommended Citation
"Calculating Double-Exponential Diode Model Parameters From Previously Extracted Single-Exponential Model Parameters" (1995). Faculty Bibliography 1990s. 1455.
https://stars.library.ucf.edu/facultybib1990/1455
Comments
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