Improved Bipolar Model-Equations For Small-Signal Circuit Simulation
Abbreviated Journal Title
Int. J. Electron.
High-Current Densities; Dimensional Model; Transistors; Formulation; Engineering, Electrical & Electronic
The silicon bipolar model equations have been examined and implemented in small-signal circuit simulation. The modified model equations account for the physical effects of emitter current crowding, emitter-base sidewall injection, base-width modulation, base-conductivity modulation, base pushout, and current-dependent series resistance for all levels of injection. SPICE simulation employing the present model is compared with the small-signal PISCES device simulation and good agreement is obtained.
International Journal of Electronics
"Improved Bipolar Model-Equations For Small-Signal Circuit Simulation" (1992). Faculty Bibliography 1990s. 617.