Title

Improved Bipolar Model-Equations For Small-Signal Circuit Simulation

Authors

Authors

J. S. Yuan;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Int. J. Electron.

Keywords

High-Current Densities; Dimensional Model; Transistors; Formulation; Engineering, Electrical & Electronic

Abstract

The silicon bipolar model equations have been examined and implemented in small-signal circuit simulation. The modified model equations account for the physical effects of emitter current crowding, emitter-base sidewall injection, base-width modulation, base-conductivity modulation, base pushout, and current-dependent series resistance for all levels of injection. SPICE simulation employing the present model is compared with the small-signal PISCES device simulation and good agreement is obtained.

Journal Title

International Journal of Electronics

Volume

72

Issue/Number

4

Publication Date

1-1-1992

Document Type

Article

DOI Link

http://dx.doi.org/10.1080/00207219208925602

Language

English

First Page

619

Last Page

630

WOS Identifier

WOS:A1992HR74800009

ISSN

0020-7217

Recommended Citation

"Improved Bipolar Model-Equations For Small-Signal Circuit Simulation" (1992). Faculty Bibliography 1990s. 617.
https://stars.library.ucf.edu/facultybib1990/617