Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis
Abbreviated Journal Title
ELECTRONICS; FABRICATION; DEVICES; ARRAYS; LOGIC; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied
We present a simple and scalable technique for the fabrication of solution processed and local-gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on the directed assembly of individual single-walled carbon nanotubes from dichloroethane via AC dielectrophoresis (DEP) onto pre-patterned source and drain electrodes with a local aluminum gate in the middle. Local-gated CNT-FET devices display superior performance compared to a global back gate with on-off ratios > 10(4) and maximum subthreshold swings of 170 mV/dec. The local bottom-gated DEP-assembled CNT-FETs will facilitate large-scale fabrication of complementary metal-oxide-semiconductor (CMOS) compatible nanoelectronic devices.
"Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis" (2008). Faculty Bibliography 2000s. 1015.