Title

Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis

Authors

Authors

P. Stokes;S. I. Khondaker

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Nanotechnology

Keywords

ELECTRONICS; FABRICATION; DEVICES; ARRAYS; LOGIC; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied

Abstract

We present a simple and scalable technique for the fabrication of solution processed and local-gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on the directed assembly of individual single-walled carbon nanotubes from dichloroethane via AC dielectrophoresis (DEP) onto pre-patterned source and drain electrodes with a local aluminum gate in the middle. Local-gated CNT-FET devices display superior performance compared to a global back gate with on-off ratios > 10(4) and maximum subthreshold swings of 170 mV/dec. The local bottom-gated DEP-assembled CNT-FETs will facilitate large-scale fabrication of complementary metal-oxide-semiconductor (CMOS) compatible nanoelectronic devices.

Journal Title

Nanotechnology

Volume

19

Issue/Number

17

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

5

WOS Identifier

WOS:000254329700005

ISSN

0957-4484

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