Title

Nanocrystalline PbTe Films

Authors

Authors

Z. Dashevsky; R. Kreizman; E. Shufer; V. Kasiyan; E. Flitsiyan; M. Shatkhin;L. Chernyak

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Nanoelectron. Optoelectron.

Keywords

PbTe Semiconductor; Nanocrystalline Films; Grain Boundaries; Photoconductivity; PBS-TYPE FILMS; PHYSICAL-PROPERTIES; POLYCRYSTALLINE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

This work deals with the impact of nano-scale morphology on the photoelectric properties of n-type PbTe thin films Nano-structured thin films were prepared by varying the rate of nucleation as a function of the nature and the temperature of the substrates. The broken bonds at the grain boundaries generate acceptor states in n-type films, capture electrons from the interior of the grains and give rise to p-type inversion layers between adjacent grains A model based on the assumption that the current is exclusively due to the motion of holes in the inversion channels along the grain boundaries, is proposed to explain the temperature dependence of photoelectric properties This approach allows designing infra-red detectors based on nano-crystalline lead chalcogenide films at the wavelength up to 4-5 mu m that don't require cryogenic cooling.

Journal Title

Journal of Nanoelectronics and Optoelectronics

Volume

4

Issue/Number

3

Publication Date

1-1-2009

Document Type

Article

Language

English

First Page

296

Last Page

301

WOS Identifier

WOS:000276810900002

ISSN

1555-130X

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