Nanocrystalline PbTe Films

    Authors

    Z. Dashevsky; R. Kreizman; E. Shufer; V. Kasiyan; E. Flitsiyan; M. Shatkhin;L. Chernyak

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    J. Nanoelectron. Optoelectron.

    Keywords

    PbTe Semiconductor; Nanocrystalline Films; Grain Boundaries; Photoconductivity; PBS-TYPE FILMS; PHYSICAL-PROPERTIES; POLYCRYSTALLINE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This work deals with the impact of nano-scale morphology on the photoelectric properties of n-type PbTe thin films Nano-structured thin films were prepared by varying the rate of nucleation as a function of the nature and the temperature of the substrates. The broken bonds at the grain boundaries generate acceptor states in n-type films, capture electrons from the interior of the grains and give rise to p-type inversion layers between adjacent grains A model based on the assumption that the current is exclusively due to the motion of holes in the inversion channels along the grain boundaries, is proposed to explain the temperature dependence of photoelectric properties This approach allows designing infra-red detectors based on nano-crystalline lead chalcogenide films at the wavelength up to 4-5 mu m that don't require cryogenic cooling.

    Journal Title

    Journal of Nanoelectronics and Optoelectronics

    Volume

    4

    Issue/Number

    3

    Publication Date

    1-1-2009

    Document Type

    Article

    Language

    English

    First Page

    296

    Last Page

    301

    WOS Identifier

    WOS:000276810900002

    ISSN

    1555-130X

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