Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications
Abbreviated Journal Title
IEEE Trans. Nucl. Sci.
Point of load (POL) power conversion; power MOSFET; radiation effects; radiation hardening; single-event burnout; single-event effects; single-event gate rupture; total ionizing dose; DEGRADATION; TRANSISTORS; EXPRESSION; IMPACT; Engineering, Electrical & Electronic; Nuclear Science & Technology
The radiation response of lateral power MOSFETs in total dose and energetic particle environments is explored. Results indicate that lateral power MOSFETs can be quite susceptible to single-event burnout. Tradeoffs involved in developing radiation hardened lateral power MOSFETs for point-of-load applications are studied using experiments and device simulations. Both design and fabrication process techniques can be used to significantly improve the single-event effect performance of lateral power MOSFETs, but the trade space between electrical and radiation performance must be carefully considered to produce an optimized design for point-of-load applications.
Ieee Transactions on Nuclear Science
Article; Proceedings Paper
"Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications" (2009). Faculty Bibliography 2000s. 1485.