Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications

    Authors

    P. E. Dodd; M. R. Shaneyfelt; B. L. Draper; R. W. Young; D. Savignon; J. B. Witcher; G. Vizkelethy; J. R. Schwank; Z. J. Shen; P. Shea; M. Landowski;S. M. Dalton

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Nucl. Sci.

    Keywords

    Point of load (POL) power conversion; power MOSFET; radiation effects; radiation hardening; single-event burnout; single-event effects; single-event gate rupture; total ionizing dose; DEGRADATION; TRANSISTORS; EXPRESSION; IMPACT; Engineering, Electrical & Electronic; Nuclear Science & Technology

    Abstract

    The radiation response of lateral power MOSFETs in total dose and energetic particle environments is explored. Results indicate that lateral power MOSFETs can be quite susceptible to single-event burnout. Tradeoffs involved in developing radiation hardened lateral power MOSFETs for point-of-load applications are studied using experiments and device simulations. Both design and fabrication process techniques can be used to significantly improve the single-event effect performance of lateral power MOSFETs, but the trade space between electrical and radiation performance must be carefully considered to produce an optimized design for point-of-load applications.

    Journal Title

    Ieee Transactions on Nuclear Science

    Volume

    56

    Issue/Number

    6

    Publication Date

    1-1-2009

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    3456

    Last Page

    3462

    WOS Identifier

    WOS:000272604900067

    ISSN

    0018-9499

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