Title

Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications

Authors

Authors

P. E. Dodd; M. R. Shaneyfelt; B. L. Draper; R. W. Young; D. Savignon; J. B. Witcher; G. Vizkelethy; J. R. Schwank; Z. J. Shen; P. Shea; M. Landowski;S. M. Dalton

Comments

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Abbreviated Journal Title

IEEE Trans. Nucl. Sci.

Keywords

Point of load (POL) power conversion; power MOSFET; radiation effects; radiation hardening; single-event burnout; single-event effects; single-event gate rupture; total ionizing dose; DEGRADATION; TRANSISTORS; EXPRESSION; IMPACT; Engineering, Electrical & Electronic; Nuclear Science & Technology

Abstract

The radiation response of lateral power MOSFETs in total dose and energetic particle environments is explored. Results indicate that lateral power MOSFETs can be quite susceptible to single-event burnout. Tradeoffs involved in developing radiation hardened lateral power MOSFETs for point-of-load applications are studied using experiments and device simulations. Both design and fabrication process techniques can be used to significantly improve the single-event effect performance of lateral power MOSFETs, but the trade space between electrical and radiation performance must be carefully considered to produce an optimized design for point-of-load applications.

Journal Title

Ieee Transactions on Nuclear Science

Volume

56

Issue/Number

6

Publication Date

1-1-2009

Document Type

Article; Proceedings Paper

Language

English

First Page

3456

Last Page

3462

WOS Identifier

WOS:000272604900067

ISSN

0018-9499

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