Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mu m IR electroluminescence
Abbreviated Journal Title
Mater. Sci. Eng. B-Solid State Mater. Adv. Technol.
electromigration; doping; Si : Li; Si : Li : Er; luminescence; CREATION; LI; Materials Science, Multidisciplinary; Physics, Condensed Matter
We suggest an alternative technique for electroluminescent device fabrication, based on our earlier findings of electric field (E-field)-induced bipolar transistor creation in Si, doped with Li. An external electric field served to induce Irm sized electroluminescent device structures in Si, that had been doped prior to E-field application, with Li, and Er via thermal in-diffusion. Such devices exhibit low temperature, near infrared (IR) electroluminescence at similar to 1.16 and 1.55 mum, corresponding to transitions associated with Li and Er levels, respectively, in the forbidden gap. While Li also creates radiative recombination centers in Si, the Er-based IR radiation is the most desirable one. At the same time Li-doping is what makes E-field-induced p-n junction fabrication possible. (C) 2001 Elsevier Science B.V. All rights reserved.
Materials Science and Engineering B-Solid State Materials for Advanced Technology
Article; Proceedings Paper
"Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mu m IR electroluminescence" (2001). Faculty Bibliography 2000s. 2532.