Title

Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mu m IR electroluminescence

Authors

Authors

L. Chernyak; J. Ghabboun; V. Lyahovitskaya;D. Cahen

Comments

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Abbreviated Journal Title

Mater. Sci. Eng. B-Solid State Mater. Adv. Technol.

Keywords

electromigration; doping; Si : Li; Si : Li : Er; luminescence; CREATION; LI; Materials Science, Multidisciplinary; Physics, Condensed Matter

Abstract

We suggest an alternative technique for electroluminescent device fabrication, based on our earlier findings of electric field (E-field)-induced bipolar transistor creation in Si, doped with Li. An external electric field served to induce Irm sized electroluminescent device structures in Si, that had been doped prior to E-field application, with Li, and Er via thermal in-diffusion. Such devices exhibit low temperature, near infrared (IR) electroluminescence at similar to 1.16 and 1.55 mum, corresponding to transitions associated with Li and Er levels, respectively, in the forbidden gap. While Li also creates radiative recombination centers in Si, the Er-based IR radiation is the most desirable one. At the same time Li-doping is what makes E-field-induced p-n junction fabrication possible. (C) 2001 Elsevier Science B.V. All rights reserved.

Journal Title

Materials Science and Engineering B-Solid State Materials for Advanced Technology

Volume

81

Issue/Number

1-3

Publication Date

1-1-2001

Document Type

Article; Proceedings Paper

Language

English

First Page

113

Last Page

115

WOS Identifier

WOS:000168392800029

ISSN

0921-5107

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