Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mu m IR electroluminescence

    Authors

    L. Chernyak; J. Ghabboun; V. Lyahovitskaya;D. Cahen

    Comments

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    Abbreviated Journal Title

    Mater. Sci. Eng. B-Solid State Mater. Adv. Technol.

    Keywords

    electromigration; doping; Si : Li; Si : Li : Er; luminescence; CREATION; LI; Materials Science, Multidisciplinary; Physics, Condensed Matter

    Abstract

    We suggest an alternative technique for electroluminescent device fabrication, based on our earlier findings of electric field (E-field)-induced bipolar transistor creation in Si, doped with Li. An external electric field served to induce Irm sized electroluminescent device structures in Si, that had been doped prior to E-field application, with Li, and Er via thermal in-diffusion. Such devices exhibit low temperature, near infrared (IR) electroluminescence at similar to 1.16 and 1.55 mum, corresponding to transitions associated with Li and Er levels, respectively, in the forbidden gap. While Li also creates radiative recombination centers in Si, the Er-based IR radiation is the most desirable one. At the same time Li-doping is what makes E-field-induced p-n junction fabrication possible. (C) 2001 Elsevier Science B.V. All rights reserved.

    Journal Title

    Materials Science and Engineering B-Solid State Materials for Advanced Technology

    Volume

    81

    Issue/Number

    1-3

    Publication Date

    1-1-2001

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    113

    Last Page

    115

    WOS Identifier

    WOS:000168392800029

    ISSN

    0921-5107

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