An analytical MOSFET breakdown model including self-heating effect
Abbreviated Journal Title
AVALANCHE BREAKDOWN; CIRCUIT SIMULATION; DEPENDENCE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
This paper presents an analytical breakdown model including self-heating effect (SHE) for NMOSFEF devices. Model evaluation is taken for a wide ambient temperature range, from room temperature to 200 degrees C, It is found that the device self-heating effect is suppressed when ambient temperature is increased, in addition, our results suggest that the conventional MOSFET breakdown model without considering the self-heating effect call overestimate the breakdown characteristics for the short-channel devices. (C) 2000 Elsevier Science Ltd. All rights reserved.
"An analytical MOSFET breakdown model including self-heating effect" (2000). Faculty Bibliography 2000s. 2608.