An analytical MOSFET breakdown model including self-heating effect

    Authors

    C. S. Ho; J. J. Liou;F. Chen

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    AVALANCHE BREAKDOWN; CIRCUIT SIMULATION; DEPENDENCE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    This paper presents an analytical breakdown model including self-heating effect (SHE) for NMOSFEF devices. Model evaluation is taken for a wide ambient temperature range, from room temperature to 200 degrees C, It is found that the device self-heating effect is suppressed when ambient temperature is increased, in addition, our results suggest that the conventional MOSFET breakdown model without considering the self-heating effect call overestimate the breakdown characteristics for the short-channel devices. (C) 2000 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    44

    Issue/Number

    1

    Publication Date

    1-1-2000

    Document Type

    Article

    Language

    English

    First Page

    125

    Last Page

    131

    WOS Identifier

    WOS:000084888200017

    ISSN

    0038-1101

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