An analytical subthreshold current model for pocket-implanted NMOSFETs
Abbreviated Journal Title
IEEE Trans. Electron Devices
modeling; MOSFET; pocket implantation; subthreshold current; VOLTAGE OPERATION; MOSFETS; TECHNOLOGY; CMOS; Engineering, Electrical & Electronic; Physics, Applied
An analytical subthreshold current model for metal oxide semiconductor field effect transistors (MOSFETs) with pocket implantation is presented. The model is developed based on considering an averaged localized pileup of channel dopants near the source and drain ends of channel to account for the pocket implantation effect and to derive the channel potential using a pseudo-two-dimensional (2-D) method. This, together with the conventional drift-diffusion theory, leads to the development of a subithrehold current model for pocket-implanted MOS devices. Model verification is carried out using data measured from a set of pocket-implanted NMOSFETs fabricated from a 0.17-mum, DRAM process. Very good agreement is obtained between the model calculations and measurement results.
Ieee Transactions on Electron Devices
"An analytical subthreshold current model for pocket-implanted NMOSFETs" (2003). Faculty Bibliography 2000s. 3807.