Title

An analytical subthreshold current model for pocket-implanted NMOSFETs

Authors

Authors

C. S. Ho; J. J. Liou; K. Y. Huang;C. C. Cheng

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

modeling; MOSFET; pocket implantation; subthreshold current; VOLTAGE OPERATION; MOSFETS; TECHNOLOGY; CMOS; Engineering, Electrical & Electronic; Physics, Applied

Abstract

An analytical subthreshold current model for metal oxide semiconductor field effect transistors (MOSFETs) with pocket implantation is presented. The model is developed based on considering an averaged localized pileup of channel dopants near the source and drain ends of channel to account for the pocket implantation effect and to derive the channel potential using a pseudo-two-dimensional (2-D) method. This, together with the conventional drift-diffusion theory, leads to the development of a subithrehold current model for pocket-implanted MOS devices. Model verification is carried out using data measured from a set of pocket-implanted NMOSFETs fabricated from a 0.17-mum, DRAM process. Very good agreement is obtained between the model calculations and measurement results.

Journal Title

Ieee Transactions on Electron Devices

Volume

50

Issue/Number

6

Publication Date

1-1-2003

Document Type

Article

Language

English

First Page

1475

Last Page

1479

WOS Identifier

WOS:000184249700007

ISSN

0018-9383

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