An analytical subthreshold current model for pocket-implanted NMOSFETs

    Authors

    C. S. Ho; J. J. Liou; K. Y. Huang;C. C. Cheng

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    modeling; MOSFET; pocket implantation; subthreshold current; VOLTAGE OPERATION; MOSFETS; TECHNOLOGY; CMOS; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    An analytical subthreshold current model for metal oxide semiconductor field effect transistors (MOSFETs) with pocket implantation is presented. The model is developed based on considering an averaged localized pileup of channel dopants near the source and drain ends of channel to account for the pocket implantation effect and to derive the channel potential using a pseudo-two-dimensional (2-D) method. This, together with the conventional drift-diffusion theory, leads to the development of a subithrehold current model for pocket-implanted MOS devices. Model verification is carried out using data measured from a set of pocket-implanted NMOSFETs fabricated from a 0.17-mum, DRAM process. Very good agreement is obtained between the model calculations and measurement results.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    50

    Issue/Number

    6

    Publication Date

    1-1-2003

    Document Type

    Article

    Language

    English

    First Page

    1475

    Last Page

    1479

    WOS Identifier

    WOS:000184249700007

    ISSN

    0018-9383

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