Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes
Abbreviated Journal Title
SURFACE-EMITTING LASER; BEAM; FEEDBACK; Optics
A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the p-doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes. (C) 2003 Optical Society of America.
"Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes" (2003). Faculty Bibliography 2000s. 4080.