Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes

    Authors

    L. Vaissie; W. Mohammed;E. G. Johnson

    Abbreviated Journal Title

    Opt. Lett.

    Keywords

    SURFACE-EMITTING LASER; BEAM; FEEDBACK; Optics

    Abstract

    A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the p-doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes. (C) 2003 Optical Society of America.

    Journal Title

    Optics Letters

    Volume

    28

    Issue/Number

    8

    Publication Date

    1-1-2003

    Document Type

    Article

    Language

    English

    First Page

    651

    Last Page

    653

    WOS Identifier

    WOS:000181989100022

    ISSN

    0146-9592

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