Title

Electron injection-induced effects in Mn-doped GaN

Authors

Authors

W. Burdett; O. Lopatiuk; L. Chernyak; M. Hermann; M. Stutzmann;M. Eickhoff

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

MG; Physics, Applied

Abstract

Electron injection into Mn-doped GaN resulted in pronounced changes in the minority carrier diffusion length and cathodoluminescence. In particular, multiple-fold decrease of the band-to-band cathodoluminescence intensity was observed in the temperature between -50 and 80degreesC. This decrease was accompanied by an increase of the minority carrier diffusion length in the material, measured by electron-beam-induced current. Temperature-dependent cathodoluminescence measurements revealed a recovery of the cathodoluminescence intensity with an activation energy of 360 meV. (C) 2004 American Institute of Physics.

Journal Title

Journal of Applied Physics

Volume

96

Issue/Number

6

Publication Date

1-1-2004

Document Type

Article

Language

English

First Page

3556

Last Page

3558

WOS Identifier

WOS:000223720000085

ISSN

0021-8979

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