Electron injection-induced effects in Mn-doped GaN
Abbreviated Journal Title
J. Appl. Phys.
MG; Physics, Applied
Electron injection into Mn-doped GaN resulted in pronounced changes in the minority carrier diffusion length and cathodoluminescence. In particular, multiple-fold decrease of the band-to-band cathodoluminescence intensity was observed in the temperature between -50 and 80degreesC. This decrease was accompanied by an increase of the minority carrier diffusion length in the material, measured by electron-beam-induced current. Temperature-dependent cathodoluminescence measurements revealed a recovery of the cathodoluminescence intensity with an activation energy of 360 meV. (C) 2004 American Institute of Physics.
Journal of Applied Physics
"Electron injection-induced effects in Mn-doped GaN" (2004). Faculty Bibliography 2000s. 4238.