Abbreviated Journal Title
J. Appl. Phys.
Keywords
MG; Physics, Applied
Abstract
Electron injection into Mn-doped GaN resulted in pronounced changes in the minority carrier diffusion length and cathodoluminescence. In particular, multiple-fold decrease of the band-to-band cathodoluminescence intensity was observed in the temperature between -50 and 80degreesC. This decrease was accompanied by an increase of the minority carrier diffusion length in the material, measured by electron-beam-induced current. Temperature-dependent cathodoluminescence measurements revealed a recovery of the cathodoluminescence intensity with an activation energy of 360 meV.
Journal Title
Journal of Applied Physics
Volume
96
Issue/Number
6
Publication Date
1-1-2004
Document Type
Article
DOI Link
Language
English
First Page
3556
Last Page
3558
WOS Identifier
ISSN
0021-8979
Recommended Citation
Burdett, William; Lopatiuk, Olena; Chernyak, Leonid; Hermann, Martin; Stutzmann, Martin; and Eickhoff, Martin, "Electron injection-induced effects in Mn-doped GaN" (2004). Faculty Bibliography 2000s. 4238.
https://stars.library.ucf.edu/facultybib2000/4238
Comments
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