Chemical mechanical polishing of tantalum: oxidizer and pH effects
Abbreviated Journal Title
J. Mater. Sci.-Mater. Electron.
METALLIZATION; ULSI; TA; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter
Chemical mechanical polishing of tantalum was carried out in alumina-dispersed deionized water, 5% H2O2 as well as 0.25 M KlO(3) solution at pH ranging from 1 to 10. High polishing rates were observed in H2O2-Containing slurry at low pH values, while KlO(3) slurry showed no appreciable effect of pH and the polishing rates were low. While tantalum pentoxide readily forms in either slurry, electrochemical observations indicate a higher dissolution rate of the oxide in H2O2 slurry, particularly at low pH accounting for the greater polishing rate. (C) 2004 Kluwer Academic Publishers.
Journal of Materials Science-Materials in Electronics
"Chemical mechanical polishing of tantalum: oxidizer and pH effects" (2004). Faculty Bibliography 2000s. 4322.