Chemical mechanical polishing of tantalum: oxidizer and pH effects

    Authors

    T. Du; D. Tamboli; V. Desai; V. S. Chathapuram;K. B. Sundaram

    Comments

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    Abbreviated Journal Title

    J. Mater. Sci.-Mater. Electron.

    Keywords

    METALLIZATION; ULSI; TA; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

    Abstract

    Chemical mechanical polishing of tantalum was carried out in alumina-dispersed deionized water, 5% H2O2 as well as 0.25 M KlO(3) solution at pH ranging from 1 to 10. High polishing rates were observed in H2O2-Containing slurry at low pH values, while KlO(3) slurry showed no appreciable effect of pH and the polishing rates were low. While tantalum pentoxide readily forms in either slurry, electrochemical observations indicate a higher dissolution rate of the oxide in H2O2 slurry, particularly at low pH accounting for the greater polishing rate. (C) 2004 Kluwer Academic Publishers.

    Journal Title

    Journal of Materials Science-Materials in Electronics

    Volume

    15

    Issue/Number

    2

    Publication Date

    1-1-2004

    Document Type

    Article

    Language

    English

    First Page

    87

    Last Page

    90

    WOS Identifier

    WOS:000186783300005

    ISSN

    0957-4522

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