Title

Chemical mechanical polishing of tantalum: oxidizer and pH effects

Authors

Authors

T. Du; D. Tamboli; V. Desai; V. S. Chathapuram;K. B. Sundaram

Comments

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Abbreviated Journal Title

J. Mater. Sci.-Mater. Electron.

Keywords

METALLIZATION; ULSI; TA; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

Abstract

Chemical mechanical polishing of tantalum was carried out in alumina-dispersed deionized water, 5% H2O2 as well as 0.25 M KlO(3) solution at pH ranging from 1 to 10. High polishing rates were observed in H2O2-Containing slurry at low pH values, while KlO(3) slurry showed no appreciable effect of pH and the polishing rates were low. While tantalum pentoxide readily forms in either slurry, electrochemical observations indicate a higher dissolution rate of the oxide in H2O2 slurry, particularly at low pH accounting for the greater polishing rate. (C) 2004 Kluwer Academic Publishers.

Journal Title

Journal of Materials Science-Materials in Electronics

Volume

15

Issue/Number

2

Publication Date

1-1-2004

Document Type

Article

Language

English

First Page

87

Last Page

90

WOS Identifier

WOS:000186783300005

ISSN

0957-4522

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