Impact of temperature-accelerated voltage stress on PMOS RF performance
Abbreviated Journal Title
IEEE Trans. Device Mater. Reliab.
breakdown (BD); hot carriers (HCs); modeling; negative bias temperature; instability (NBTI); radio frequency (RF) circuit simulation; temperature-accelerated stress; GATE-OXIDE BREAKDOWN; HOT-CARRIER; DEGRADATION; MOSFETS; RELIABILITY; AC; Engineering, Electrical & Electronic; Physics, Applied
The thermal electrochemical analysis and modeling, of negative bias temperature instability, oxide breakdown, and hot-carrier injection effects on metal-oxide-semiconductor devices are performed.. The temperature-accelerated voltage stress has been examined experimentally. A subcircuit model aiming to evaluate the stress-induced degradation via simulation is developed. The measured and simulated performance for fresh and stressed devices at different temperatures is presented: The. radio frequency performance degradation of a test circuit due to temperature-accelerated voltage stress is investigated.
Ieee Transactions on Device and Materials Reliability
"Impact of temperature-accelerated voltage stress on PMOS RF performance" (2004). Faculty Bibliography 2000s. 4910.