Impact of temperature-accelerated voltage stress on PMOS RF performance

    Authors

    C. Z. Yu; U. Liu;J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    breakdown (BD); hot carriers (HCs); modeling; negative bias temperature; instability (NBTI); radio frequency (RF) circuit simulation; temperature-accelerated stress; GATE-OXIDE BREAKDOWN; HOT-CARRIER; DEGRADATION; MOSFETS; RELIABILITY; AC; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The thermal electrochemical analysis and modeling, of negative bias temperature instability, oxide breakdown, and hot-carrier injection effects on metal-oxide-semiconductor devices are performed.. The temperature-accelerated voltage stress has been examined experimentally. A subcircuit model aiming to evaluate the stress-induced degradation via simulation is developed. The measured and simulated performance for fresh and stressed devices at different temperatures is presented: The. radio frequency performance degradation of a test circuit due to temperature-accelerated voltage stress is investigated.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    4

    Issue/Number

    4

    Publication Date

    1-1-2004

    Document Type

    Article

    Language

    English

    First Page

    664

    Last Page

    669

    WOS Identifier

    WOS:000226617100012

    ISSN

    1530-4388

    Share

    COinS