MOSFET linearity performance degradation subject to drain and gate voltage-stress
Abbreviated Journal Title
IEEE Trans. Device Mater. Reliab.
complementary metal-oxide-semiconductor; (CMOS) mixers; gate oxide; breakdown (BD); Gilbert cell; hot carriers (HCs); linearity; voltage; stress; Volterra series; HOT-CARRIER; CMOS; DISTORTION; BREAKDOWN; MODEL; Engineering, Electrical & Electronic; Physics, Applied
Device parameters degradation of nonlinear elements subject to drain and gate voltage stress is examined experimentally. Analysis of metal-oxide-semiconductor field-effect transistor linearity degradation due to stress is given.. Effects on radio frequency (RF) circuit linearity are investigated systematically through a SpectreRF simulation based on measured device data.
Ieee Transactions on Device and Materials Reliability
"MOSFET linearity performance degradation subject to drain and gate voltage-stress" (2004). Faculty Bibliography 2000s. 4911.