MOSFET linearity performance degradation subject to drain and gate voltage-stress

    Authors

    C. Z. Yu; J. S. Yuan;H. Yang

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    complementary metal-oxide-semiconductor; (CMOS) mixers; gate oxide; breakdown (BD); Gilbert cell; hot carriers (HCs); linearity; voltage; stress; Volterra series; HOT-CARRIER; CMOS; DISTORTION; BREAKDOWN; MODEL; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Device parameters degradation of nonlinear elements subject to drain and gate voltage stress is examined experimentally. Analysis of metal-oxide-semiconductor field-effect transistor linearity degradation due to stress is given.. Effects on radio frequency (RF) circuit linearity are investigated systematically through a SpectreRF simulation based on measured device data.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    4

    Issue/Number

    4

    Publication Date

    1-1-2004

    Document Type

    Article

    Language

    English

    First Page

    681

    Last Page

    689

    WOS Identifier

    WOS:000226617100015

    ISSN

    1530-4388

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