Title

MOSFET linearity performance degradation subject to drain and gate voltage-stress

Authors

Authors

C. Z. Yu; J. S. Yuan;H. Yang

Comments

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Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

complementary metal-oxide-semiconductor; (CMOS) mixers; gate oxide; breakdown (BD); Gilbert cell; hot carriers (HCs); linearity; voltage; stress; Volterra series; HOT-CARRIER; CMOS; DISTORTION; BREAKDOWN; MODEL; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Device parameters degradation of nonlinear elements subject to drain and gate voltage stress is examined experimentally. Analysis of metal-oxide-semiconductor field-effect transistor linearity degradation due to stress is given.. Effects on radio frequency (RF) circuit linearity are investigated systematically through a SpectreRF simulation based on measured device data.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

4

Issue/Number

4

Publication Date

1-1-2004

Document Type

Article

Language

English

First Page

681

Last Page

689

WOS Identifier

WOS:000226617100015

ISSN

1530-4388

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