A new equivalent circuit model of IGBT for simulation of current sensors
Abbreviated Journal Title
IEEE Trans. Power Electron.
power semiconductor devices; sensors; Engineering, Electrical & Electronic
A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into account both electron and hole conduction in sensors and is incorporated with SPICE3 for the simulation of three types of current sensors, namely active, bipolar, and MOS sensors. It adopts a multiMOS model to include the doping variation in the MOS body. The results agree well with the current sensing measurements within an average error of 4.4%.
Ieee Transactions on Power Electronics
"A new equivalent circuit model of IGBT for simulation of current sensors" (2005). Faculty Bibliography 2000s. 5324.