Title

A new equivalent circuit model of IGBT for simulation of current sensors

Authors

Authors

C. H. Kao; C. C. Tseng; F. M. Lee;Z. J. Shen

Comments

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Abbreviated Journal Title

IEEE Trans. Power Electron.

Keywords

power semiconductor devices; sensors; Engineering, Electrical & Electronic

Abstract

A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into account both electron and hole conduction in sensors and is incorporated with SPICE3 for the simulation of three types of current sensors, namely active, bipolar, and MOS sensors. It adopts a multiMOS model to include the doping variation in the MOS body. The results agree well with the current sensing measurements within an average error of 4.4%.

Journal Title

Ieee Transactions on Power Electronics

Volume

20

Issue/Number

4

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

725

Last Page

731

WOS Identifier

WOS:000230420800001

ISSN

0885-8993

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