A new equivalent circuit model of IGBT for simulation of current sensors

    Authors

    C. H. Kao; C. C. Tseng; F. M. Lee;Z. J. Shen

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Power Electron.

    Keywords

    power semiconductor devices; sensors; Engineering, Electrical & Electronic

    Abstract

    A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into account both electron and hole conduction in sensors and is incorporated with SPICE3 for the simulation of three types of current sensors, namely active, bipolar, and MOS sensors. It adopts a multiMOS model to include the doping variation in the MOS body. The results agree well with the current sensing measurements within an average error of 4.4%.

    Journal Title

    Ieee Transactions on Power Electronics

    Volume

    20

    Issue/Number

    4

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    725

    Last Page

    731

    WOS Identifier

    WOS:000230420800001

    ISSN

    0885-8993

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