High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes
Abbreviated Journal Title
Appl. Phys. Lett.
GALLIUM NITRIDE; HIGH-POWER; PROTON IRRADIATION; GAN; OPERATION; BLUE; TEMPERATURE; LEDS; MW; Physics, Applied
InGaN multiquantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 510 nm were irradiated with (60)Co gamma-rays with doses in the range 150-2000 Mrad (Si). The forward turn-on voltage for all the irradiated LEDs was increased slightly (e.g., by only similar to 0.1-0.15 V for 500 MRad dose irradiation) while the reverse breakdown voltage was unchanged within experimental error. The light output intensity for the 410 nm diodes was decreased by 20% after a dose of 150 MRad and 75% after similar to 2 GRad. The current transport in the LEDs was dominated by generation-recombination (ideality factor similar to 2) both before and after irradiation. The morphology and appearance of the p and n-Ohmic metallization did not show any detectable change as a result of even the highest gamma-ray dose. (c) 2005 American Institute of Physics.
Applied Physics Letters
"High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes" (2005). Faculty Bibliography 2000s. 5343.