Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
GALLIUM NITRIDE; HIGH-POWER; PROTON IRRADIATION; GAN; OPERATION; BLUE; TEMPERATURE; LEDS; MW; Physics, Applied
Abstract
InGaN multiquantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 510 nm were irradiated with (60)Co gamma-rays with doses in the range 150-2000 Mrad (Si). The forward turn-on voltage for all the irradiated LEDs was increased slightly (e.g., by only similar to 0.1-0.15 V for 500 MRad dose irradiation) while the reverse breakdown voltage was unchanged within experimental error. The light output intensity for the 410 nm diodes was decreased by 20% after a dose of 150 MRad and 75% after similar to 2 GRad. The current transport in the LEDs was dominated by generation-recombination (ideality factor similar to 2) both before and after irradiation. The morphology and appearance of the p and n-Ohmic metallization did not show any detectable change as a result of even the highest gamma-ray dose.
Journal Title
Applied Physics Letters
Volume
87
Issue/Number
21
Publication Date
1-1-2005
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Khanna, Rohit; Han, Sang Youn; Pearton, S. J.; Schoenfeld, D.; Schoenfeld, W. V.; and Ren, F., "High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes" (2005). Faculty Bibliography 2000s. 5343.
https://stars.library.ucf.edu/facultybib2000/5343
Comments
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